| Part Number | GS61008P |
|---|---|
| Downloads | Datasheet Spice Models Step File Allegro Library Altium Library ECAD Model |
| VDS | 100 V E-HEMT |
| IDS | 90 A |
| RDS(on) | 7 mΩ |
| QG | 8 nC |
| Dimensions (mm) | 7.6 x 4.6 x 0.51 |
| Cooling | Bottom-Side |
GS61008P
100V Enhancement Mode GaN Transistor
The GS61008P is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS61008P is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
- Ultra-low FOM Island Technology® die
- Low inductance GaNPX® package
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
- Reverse current capability
- Zero reverse recovery loss
- Small 7.6 x 4.6 mm2 PCB footprint
- Source Sense (SS) pin for optimized gate drive
- RoHS 3 (6+4) compliant
- Energy Storage Systems
- AC-DC Converters (secondary side)
- Uninterruptable Power Supplies
- Industrial Motor Drives
- Fast Battery Charging
- Class D Audio amplifiers
- Traction Drive
- Robotics
- Wireless Power Transfer
Evaluation Boards
- GS-EVB-HB-61008P-ON: 100V High-Speed GaN Half-Bridge
- GSWP100W-EVBPA: 100W, 6.78 MHz Class EF2 Power Amplifier For Wireless Power Transfer
- GS-EVB-AUD-BUNDLE2-GS: Audio Class D 2-channel amplifier and 400W SPMS
- LTC7800: Analog Devices High Frequency Synchronous Step-Down Controller
- PE29101: pSemi High-speed FET Driver
