| Part Number | GS-065-011-1-L |
|---|---|
| Downloads | Datasheet Design Note Spice Models Step File Allegro Library Altium Library ECAD Model |
| VDS | 650 V E-HEMT |
| IDS | 11 A |
| RDS(on) | 150 mΩ |
| QG | 2.2 nC |
| Dimensions (mm) | 5.0 x 6.0 x 0.85 |
| Cooling | Bottom-Side |
GS-065-011-1-L
650V Enhancement Mode GaN Transistor
The GS-065-011-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. The GS-065-011-1-L is a bottom-side cooled transistor in a 5×6 mm PDFN package that offers low junction-to-case thermal resistance. These features combine to provide very high efficiency power switching.
- Ultra-low FOM
- Small 5×6 mm PDFN package
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V )
- High switching frequency (> 1 MHz)
- Fast and controllable fall and rise times
- Source Sense pad for optimized gate drive
- Reverse conduction capability
- Zero reverse recovery loss
- RoHS 3 (6+4) compliant
- Power adapters
- LED lighting drivers
- Fast battery charging
- Power Factor Correction
- Appliance motor drives
- Wireless power transfer
- Industrial power supplies
Evaluation Boards
- GS65011-EVBEZ: EZDrive® Open Loop Boost Evaluation Board
- GS-EVM-CHG-65WQR-GS1: 65W QR Type-C USB PD Charger Reference Design
- GS-EVM-CHG-140WPFCQR-GS1: 140W PFC + DS QR PD3.1 Charger reference design
