Part NumberGS66502B
DownloadsDatasheet
LTSpice
PSpice
Step File
Allegro Library
Altium Library
Evaluation BoardsGS665MB-EVB
(Mother board)
VDS650 V E-HEMT
IDS7.5 A
RDS(on)200 mΩ
QG1.5 nC
Dimensions (mm)5.0 x 6.6 x 0.51
CoolingBottom-Side
MR QTY250
TR QTY3000
MR Size16 mm x 7″
TR Size16 mm x 13″

GS66502B

650V Enhancement Mode GaN Transistor

The GS66502B is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS66502B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Easy gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 V / +10 V )
  • Very high switching frequency (> 100 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 5.0 x 6.6 mm2 PCB footprint
  • RoHS 6 compliant

APPLICATIONS

  • High efficiency power conversion
  • High density power conversion
  • AC-DC Converters
  • Bridgeless Totem Pole PFC
  • ZVS Phase Shifted Full Bridge
  • Half Bridge topologies
  • Synchronous Buck or Boost
  • Small-Medium UPS
  • Appliance Motor Drives
  • Single phase inverter legs
  • Fast Battery Charging
  • Class D Audio amplifiers
  • DC-DC converters

EVALUATION BOARD: GS665MB-EVB

650 V Universal Motherboard

This universal motherboard can be used with daughter cards (sold separately) to evaluate the entire GaN Systems 650 V family of GaN E-HEMT products.

COMPATIBLE WITH:

  • GS66508B-EVBDB
  • GS66508T-EVBDB2
  • GS66516T-EVBDB2