The webinar compares GaN E-HEMT with Silicon and SiC MOSFETs in a Power Supply Unit (PSU) with Bridgeless Totem Pole PFC and LLC resonant converter topologies. The presentation concludes that GaN E-HEMT solutions provide higher efficiency than SiC and 40% higher power density than the conventional Si-based PSU design.
With Dr. Jimmy Liu, Technical Marketing Director at GaN Systems
View this video on YouTube >
In this webinar, you’ll learn:
- The key transistor parameter advantages for GaN compared to Si and SiC
- GaN-based Power Supply Unit (PSU) efficiency and power density benefits
- System design considerations with GaN-based high switching frequency (CCM Totem Pole PFC at 200KHz and LLC at 500KHz)