https://gansystems.com/wp-content/uploads/2020/04/webinar-featured.jpg 415 827 LaunchSnap https://gansystems.com/wp-content/uploads/2018/02/gan-systems-logo-fc-340x156.png LaunchSnap2020-04-10 00:07:552020-04-10 15:56:17Webinar: GaN Performance Advantage in Totem Pole PFC and LLC Converters
Webinar: GaN Performance Advantage in Totem Pole PFC and LLC Converters
The webinar compares GaN E-HEMT with Silicon and SiC MOSFETs in a Power Supply Unit (PSU) with Bridgeless Totem Pole PFC and LLC resonant converter topologies. The presentation concludes that GaN E-HEMT solutions provide higher efficiency than SiC and 40% higher power density than the conventional Si-based PSU design.
With Dr. Jimmy Liu, Technical Marketing Director at GaN Systems
In this webinar, you’ll learn:
- The key transistor parameter advantages for GaN compared to Si and SiC
- GaN-based Power Supply Unit (PSU) efficiency and power density benefits
- System design considerations with GaN-based high switching frequency (CCM Totem Pole PFC at 200KHz and LLC at 500KHz)