GaN power transistors are the building blocks of change for the design of a new generation of smaller, lower cost, more efficient power systems – free from the limitations of yesterday’s silicon.

Over the past several years, power engineers have demonstrated that systems designed with GaN power transistors exhibit high efficiency and power density due to GaN’s superior switching performance. One characteristic that continues to draw attention from academia and industry is dynamic RDS(on) performance of GaN devices.

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