Recently, I had the opportunity to attend and present at this year’s annual membership conference for the Industrial Technology Research Institute for Taiwan (ITRI). One of the world’s leading R&D institutes, ITRI’s mission is to advance new technological capabilities within Taiwan and ensure that Taiwan is at the forefront of technology innovation. The conference had…
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On December 5, 2017, I attended and presented at the first Bodo Power Electronics Conference, in Munich, Germany. Bodo Power Systems and ICC Media/AspenCore Europe organized this one-day conference, focused on Wide Band Gap Semiconductors. The conference brought together leading experts in the areas of Silicon Carbide (SiC) and GaN and showcased that Wide Band…
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OTTAWA, ONTARIO, December 14, 2017 – GaN Systems, the global leader of GaN (gallium nitride) power semiconductors, announced the launch and availability of its Insulated Metal Substrate (IMS) Evaluation Platform, which provides a flexible, low cost, high power development platform for high-efficiency power systems with 3kW or higher applications. The IMS Evaluation Platform, in combination…
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OTTAWA, Ontario, December 11, 2017 – GaN Systems, the global leader in GaN power semiconductors, has announced that Delta, the worldwide leader in power systems, has joined BMW i Ventures in participation of a strategic investment in GaN Systems. GaN Systems plans to use the funding to expand global sales and accelerate product innovation to…
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OTTAWA, ONTARIO, December 6, 2017 – Power – creating more efficient uses is one of the most pressing challenges in the 21st century. We live in an increasingly data and energy driven world that is following a clear trajectory of increasing reliance on and proliferation of data centers, electric vehicles, renewable energy, powerful industrial motors,…
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GaN is seen as a new technology in a new package with new characteristics. While it may not be new to some, for those who are unfamiliar to GaN’s innovation, the clock’s ticking and their competitors are developing systems with GaN. For some people, the fear of the unknown is intimidating at best. These individuals…
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OTTAWA, ONTARIO, December 1, 2017 – Winners from the annual China Power Supply Association (CPSS) competition were honored at the organization’s annual meeting on November 22, 2017 by sponsor GaN Systems, the global leader of GaN (gallium nitride) power semiconductors, alongside CPSS, China Power Society Science Popularization Committee, and Nanjing University of Aeronautics and Astronautics.…
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The old way of creating power modules with gallium-nitride power devices was to just substitute GaN devices for silicon equivalents in the module chassis. The resulting modules just didn’t perform up to their potential. As explained by GaN Systems’ Jim Witham in this short video interview conducted by WHWT Media’s Lee Teschler, new module designs…
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GaNpx packaging provides extreme speed and current with: 1) a near chipscale embedded package, 2) high current density & low profile, 3) optimal thermal performance, 4) extremely low inductance, and 5) no wirebonds. GaN Systems makes it easy for designers and systems engineers to adopt gallium nitride solutions.
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