Part NumberGS66516T
Spice Models
Step File
Allegro Library
Altium Library

ECAD Model

RDS(on)25 mΩ
QG14.2 nC
Dimensions (mm)9.0 x 7.6 x 0.54


650V Enhancement Mode GaN Transistor

The GS66516T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS66516T is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Simple gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 / +10 V )
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 9 x 7.6 mm2 PCB footprint
  • Dual gate pads for optimal board layout
  • RoHS 3 (6+4) compliant


  • AC-DC Converters
  • DC-DC Converter
  • Bridgeless Totem Pole PFC
  • Inverters
  • Energy Storage Systems
  • On Board Battery Chargers
  • Uninterruptible Power Supplies
  • Solar Energy
  • Industrial Motor Drives
  • Laser Drivers
  • Traction Drive
  • Wireless Power Transfer

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Evaluation Boards

  • GS66516T-EVBDB2: 650 V GaN Isolated Optocoupler Driver HB Daughter Board1
  • GS-EVB-BTP-3KW-GS: 3 kW High efficiency Bridgeless Totem Pole PFC Evaluation Board & Reference Design

Related Videos:

GaN Systems – GaNpx Packaging Process Flow

GaN Powered: Revolutionizing Today’s Most Power Demanding Industries