| Part Number | GS66506T |
|---|---|
| Downloads | Datasheet Spice Models Step File Allegro Library Altium Library ECAD Model |
| VDS | 650 V E-HEMT |
| IDS | 22.5 A |
| RDS(on) | 67 mΩ |
| QG | 4.5 nC |
| Dimensions (mm) | 5.6 x 4.5 x 0.54 |
| Cooling | Top-Side |
GS66506T
650V Enhancement Mode GaN Transistor
The GS66506T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS66506T is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
- Ultra-low FOM Island Technology™ die
- Low inductance GaNPX® package
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 / +10 V )
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
- Reverse current capability
- Zero reverse recovery loss
- Small 5.6 x 4.5 mm2 PCB footprint
- Dual gate pads for optimal board layout
- RoHS 3 (6+4) compliant
- AC-DC Converters
- DC-DC Converters
- Uninterruptible Power Supplies
- Industrial Motor Drives
- Appliance Motor Drives
- Fast Battery Charging
- Class D Audio Amplifiers
- Wireless Power Transfer
