| Part Number | GS-065-060-5-B-A |
|---|---|
| Downloads | Datasheet Spice Models Step File Altium Library ECAD Model |
| VDS | 650 V |
| IDS | 60 A |
| RDS(on) | 25 mΩ |
| QG | 14 nC |
| Dimensions (mm) | 11 x 9 x 0.63 |
| Cooling | Bottom-Side |
GS-065-060-5-B-A
650V Automotive E-Mode GaN Transistor
The GS-065-060-5-B-A is an Automotive-grade 650 V E-mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS-065-060-5-B-A is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
- AEC-Q101 and AutoQual+™ (Enhanced-AEC-Q101)
- 650 V enhancement mode power transistor
- Bottom-cooled, Low inductance GaNPX® package
- RDS(on) = 25 mΩ
- IDS(max) = 60 A
- Ultra-low FOM
- Simple gate drive Requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Small 11 x 9 mm2 PCB footprint
- Dual gate pads for optimal board layout
- RoHS 3 (6+4) compliant
- On Board Chargers
- Traction Drive
- DC-DC converters
- AC-DC Converters
- Industrial Motor Drives
- Solar Inverters
- Bridgeless Totem Pole PFC
