| Part Number | GS-065-030-2-L |
|---|---|
| Downloads | Datasheet Design Note Spice Models Step File Allegro Library Altium Library ECAD Model |
| VDS | 650 V |
| IDS | 30 A |
| RDS(on) | 50 mΩ |
| QG | 6.7 nC |
| Dimensions (mm) | 8 x 8 x 0.9 |
| Cooling | Bottom-Side |
GS-065-030-2-L
650V Enhancement Mode GaN Transistor
The GS-065-030-2-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS-065-030-2-L is a bottom-side cooled transistor that offers low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
- 650 V enhancement mode power transistor
- Bottom-cooled, small 8×8 mm PDFN package
- RDS(on) = 50 mΩ
- IDS(max) = 30 A
- Simple gate drive Requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 / +10 V)
- Very high switching frequency (> 1 MHz)
- Fast and controllable fall and rise times
- Source Sense (SS) pin for optimized gate drive
- Reverse conduction capability
- Zero reverse recovery loss
- RoHS 3 (6+4) compliant
- Bridgeless Totem Pole PFC
- Consumer, Industrial and Datacenter High Density Power Supply
- High Power Adapters
- LED Lighting Drivers
- Appliance and Industrial Motor Drives
- Solar Inverter
- Uninterruptible Power Supplies
- Laser Drivers
- Wireless Power Transfer
Evaluation Board:
- GS-EVB-LLC-3KW-GS: 3KW High Efficiency LLC Reference Design
- GS-EVB-AUD-BUNDLE2-GS: Audio Class D 2-channel amplifier and 400W SPMS
