| Part Number | GS-065-018-2-L |
|---|---|
| Downloads | Datasheet Design Note Spice Models Step File Allegro Library Altium Library ECAD Model |
| VDS | 650 V E-HEMT |
| IDS | 18 A |
| RDS(on) | 78 mΩ |
| QG | 4 nC |
| Dimensions (mm) | 8.0 x 8.0 x 0.9 |
| Cooling | Bottom-Side |
GS-065-018-2-L
650V Enhancement Mode GaN Transistor
The GS-065-018-2-L is a 650V enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS-065-018-2-L is a bottom-side cooled transistor that offers low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
- 650 V enhancement mode power transistor
- Bottom-cooled, 8×8 mm PDFN package
- RDS(on) = 78 mΩ
- IDSmax,DC = 18 A / IDSmax,Pulse = 35 A
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- High switching frequency (> 1 MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Source Sense (SS) pin for optimized gate drive
- RoHS 3 (6+4) compliant
- Consumer and Industrial Power Supplies
- Power Adapters
- LED Lighting Drivers
- Fast Battery Charging
- Power Factor Correction
- Appliance and Industrial Motor Drives
- Wireless Power Transfer
