| Part Number | GS-065-011-2-L |
|---|---|
| Downloads | Datasheet Design Note Spice Models Step File Allegro Library Altium Library ECAD Model |
| VDS | 650 V |
| IDS | 11 A |
| RDS(on) | 150 mΩ |
| QG | 2.2 nC |
| Dimensions (mm) | 8 x 8 x 0.9 |
| Cooling | Bottom-Side |
GS-065-011-2-L
650V Enhancement Mode GaN Transistor
The GS-065-011-2-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS-065-011-2-L is a bottom-side cooled transistor that offers low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
- 650 V enhancement mode power transistor
- Bottom-cooled 8×8 mm PDFN package
- RDS(on) = 150 mΩ
- IDS(max) = 11 A
- Ultra-low FOM
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- High switching frequency (> 1 MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Source Sense (SS) pin for optimized gate drive
- RoHS 3 (6+4) compliant
- Consumer and Industrial Power Supplies
- Power Adapters
- LED Lighting Drivers
- Fast Battery Charging
- Power Factor Correction
- Appliance and Industrial Motor Drives
- Wireless Power Transfer
Evaluation Boards:
- GS-EVB-AUD-BUNDLE2-GS: Audio Class D 2-channel amplifier and 400W SPMS
- GS-EVM-CHG-250WPFCLLC-GS1: 250W AC/DC Charger PFC & LLC reference design
