Part NumberGS-065-008-1-L
Design Note
Spice Models
Step File
Allegro Library
Altium Library

ECAD Model

VDS650 V
RDS(on)225 mΩ
QG1.5 nC
Dimensions (mm)5.0 x 6.0 x 0.85


650V Enhancement Mode GaN Transistor

The GS-065-008-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield.  The GS-065-008-1-L is a bottom-side cooled transistor in a 5×6 mm PDFN package that offers low junction-to-case thermal resistance.  These features combine to provide very high efficiency power switching.

  • Ultra-low FOM
  • Bottom-cooled, small 5×6 mm PDFN package
  • Simple gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 V / +10 V )
  • High switching frequency (> 1 MHz)
  • Fast and controllable fall and rise times
  • Source Sense (SS) pin for optimized gate drive
  • Reverse conduction capability
  • Zero reverse recovery loss
  • RoHS 3 (6+4) compliant


  • Power adapters
  • LED lighting drivers
  • Fast battery charging
  • LLC converters
  • Power Factor Correction
  • Appliance motor drives
  • Wireless power transfer
  • Industrial power supplies

Evaluation Board

Related Video:

GaN Powered: Revolutionizing Today’s Most Power Demanding Industries

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