The Fundamental Building Block for Power Electronics

Gallium nitride (GaN) is creating an innovative shift throughout the power electronics world. For decades, silicon-based MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) have been an integral part of the everyday modern world that helps convert energy to power. However, we are reaching the theoretical limit on how much silicon MOSFETs can be improved, how power-efficient they can be. With increasing power density and efficiency requirements and environmental pollution regulations trends, silicon is failing to meet these modern demands.

Gallium nitride is on the rise to replace silicon as the backbone of power switching technology as it can meet the growing needs with better power systems efficiency, performance and system cost.