Not Recommended for New Designs.
For new designs, use GS66508B
| Part Number | GS66508P |
|---|---|
| Downloads | Datasheet LTSpice PSpice Step File Allegro Library Altium Library ECAD Model |
| VDS | 650 V E-HEMT |
| IDS | 30 A |
| RDS(on) | 50 mΩ |
| QG | 5.8 nC |
| Dimensions (mm) | 10.0 x 8.7 x 0.51 |
| Cooling | Bottom-Side |
GS66508P
650V Enhancement Mode GaN Transistor
The GS66508P is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS66508P is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
- Ultra-low FOM Island Technology® die
- Low inductance GaNPX® package
- Easy gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- Very high switching frequency (> 100 MHz)
- Fast and controllable fall and rise times
- Reverse current capability
- Zero reverse recovery loss
- Small 10.0 x 8.7 mm2 PCB footprint
- Source Sense (SS) pin for optimized gate drive
- RoHS 6 compliant
- High efficiency power conversion
- High density power conversion
- AC-DC Converters
- Bridgeless Totem Pole PFC
- ZVS Phase Shifted Full Bridge
- Half Bridge topologies
- Synchronous Buck or Boost
- Uninterruptable Power Supplies
- Industrial Motor Drives
- Single and 3Φ inverter legs
- Solar and Wind Power
- Fast Battery Charging
- Class D Audio amplifiers
- 400 V input DC-DC converters
- On Board Battery Chargers
- Traction Drive
