| Part Number | GS61004B |
|---|---|
| Downloads | Datasheet Spice Models Step File Allegro Library Altium Library ECAD Model |
| VDS | 100 V E-HEMT |
| IDS | 38 A |
| RDS(on) | 16 mΩ |
| QG | 3.3 nC |
| Dimensions (mm) | 4.6 x 4.4 x 0.51 |
| Cooling | Bottom-Side |
GS61004B
100V Enhancement Mode GaN Transistor
The GS61004B is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown, high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS61004B is a bottom-cooled transistor that offer very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
- Ultra-low FOM Island Technology® die
- Low inductance GaNPX® package
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
- Reverse current capability
- Zero reverse recovery loss
- Small 4.6 x 4.4 mm2 PCB footprint
- RoHS 3 (6+4) compliant
- Enterprise and networking power
- Uninterruptable power supplies
- Industrial motor drives
- Solar power
- Fast battery charging
- Class D audio amplifiers
- Smart home
- Wireless Power Transfer
Evaluation Boards
- GSWP050W-EVBPA: 50W, 6.78MHz Class EF2 Power Amplifier For Wireless Power Transfer
- PE29102: pSemi High-speed FET Driver
