This horizontal Insulated Metal Substrate (IMS) evaluation platform can be used to evaluate the electrical and thermal performance benefits of GaNPX® bottom-side cooled E-HEMTs in high power applications.

The optimized thermal and electrical designs provide a excellent reference for implementing a low cost, high performance design.

Features and Benefits

• Enhanced thermal and mechanical design
• Ultra low inductance, bottom-cooled GaNPX® package
• Minimizing parasitic elements of the power and gate drive loops via magnetic flux-cancellation
• High performance switching with low EMI
• Scalable and parallelable GaNPX® packaging for applications up to 100 kW
• Low cost thermal solution for high power applications.

The platform consists of a gate drive motherboard and separate Half Bridge IMS evaluation boards (3kW and 6kW). The motherboard layout is configured to drive 1 or 2 half bridge circuits or 1 full bridge circuit.

IMS2 platform gate drive motherboard
GSP665HPMB-EVBIMS2

IMS2 half bridge evaluation boards
GSP66508BHB-EVBIMS2
GSP66516BHB-EVBIMS2