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| Part Number | GS-065-080-1-D |
|---|---|
| VDS | 650 V E-HEMT |
| IDS | 80 A |
| RDS(on) | 18 mΩ |
| QG | 16 nC |
| Dimensions (mm) | 6.6 x 5.6 |
GS-065-080-1-D
650V Enhancement Mode GaN Transistor
The GS-065-080-1-D is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. These features combine to provide very high efficiency power switching.
- Ultra-low FOM Island Technology® die
- Easy gate drive requirements
- Transient tolerant gate drive (-20 / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
- Reverse current capability
- Zero reverse recovery loss
- Small 6.6 x 5.6 mm PCB footprint
- RoHS 3 (6+4) compliant
- Dual gate drive for optimized layout & paralleling
- High efficiency power conversion
- High density power conversion
- AC-DC Converters
- On Board Battery Chargers
- Traction Drive
- Bridgeless Totem Pole PFC
- ZVS Phase Shifted Full Bridge
- Half Bridge topologies
- Synchronous Buck or Boost
- Uninterruptable Power Supplies
- Industrial Motor Drives
- Single and 3Φ inverter legs
- Solar Power
- Fast Battery Charging
- DC-DC converter
- Energy Storage Systems
