Part NumberGS66516B
DownloadsDatasheet
LTSpice
PSpice
Step File
Allegro Library
Altium Library
Evaluation BoardsGSP65RXXHB-EVB
VDS650 V E-HEMT
IDS60 A
RDS(on)25 mΩ
QG12 nC
Dimensions (mm)11.0 x 9.0 x 0.51
CoolingBottom-Side
MR QTY250
TR QTY2000
MR Size24 mm x 7″
TR Size24 mm x 13″

GS66516B

650V Enhancement Mode GaN Transistor

The GS66516B is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS66516B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Easy gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 / +10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 11 x 9 mm2 PCB footprint
  • Source Sense (SS) pads for optimized gate drive
  • Dual gate and source sense pads for optimal board layout
  • RoHS 6 compliant

APPLICATIONS

  • High efficiency power conversion
  • High density power conversion
  • AC-DC Converters
  • Bridgeless Totem Pole PFC
  • ZVS Phase Shifted Full Bridge
  • Half Bridge topologies
  • Synchronous Buck or Boost
  • Uninterruptable Power Supplies
  • Industrial Motor Drives
  • Single and 3Φ inverter legs
  • Solar and Wind Power
  • Fast Battery Charging
  • DC-DC converters
  • On Board Battery Chargers
  • Traction Drive

EVALUATION BOARD: GSP65RXXHB-EVB

High Power IMS Evaluation Platform

This Insulated Metal Substrate (IMS) evaluation platform can be used to evaluate the electrical and thermal performance benefits of GaNPX® E-HEMTs on an Insulated Metal Substrate for high power applications. The platform consists of a motherboard and separate Half bridge IMS modules (3kW and 6kW).

These assemblies can be configured into any of 12 different topologies, architectures and operating modes. The IMS Evaluation modules can also be purchased independently for use as a high power GaN intelligent power module (IPM) to be used with the designer’s own board for in-system prototyping.

IMS Platform Motherboard
GSP65MB-EVB

IMS Evaluation Modules Half Bridge with Gate Drive
GSP65R13HB-EVB: 650V/13mOhm, 4-7kW
GSP65R25HB-EVB: 650V/25mOhm, 2-4kW

Half bridge/Full bridge Configuration Options
Configuration options