Powered by GaN: Philips SPS2316G/93, 2C1A 65W GaN Charger

2020 is the year of the GaN charger and the announcement we made today about the Philips multi-port 65W GaN fast charging device validates that point.

This 65W charger is the next generation of Philips’ 2C1A 18W product and shows big improvements from the previous version. It’s compact and offers higher power and faster charging times – all factors that are important to consumers and highlight why GaN has become the technology of choice in power adapters and chargers.
Featuring a modern hexagonal design, the charger includes three AC outlets and three USB ports (two USB-C and one USB-A) making it an “all-in-one” device that can replace multiple chargers. Performance tests show that it can charge three digital devices at the same time while also supplying power to three 220V devices.

 

Charger highlights:

• Small Size: Using GaN power semiconductors in adapter and charger circuit designs result in devices that are lighter and up to 5X smaller the current size. At 61x65X65 mm, the Philips charger is 75 percent smaller than legacy solutions.

• Higher Power: The Philips charger can support up to 2500W passthrough power, which is remarkable. The device can charge a range of devices from phones, laptops to ultra-high-power chargers, fans, speakers, TVs, and more.

• Faster Charging: The charger’s USB interfaces support 65W (USB-C) and 60W (USB-A) high power fast charging protocols.

 The output performance of the two USB-C single-ports is the same and supports 45W+18W dual-port charging mode, which can quickly charge even the most power-hungry devices simultaneously at full speed.

Other Highlights

While consumers might not regard factors such as temperature and stability, manufacturers do. Additional highlights from the performance report include:

• In the temperature test, the current maximum temperature of the charger reached 71°C. This is much lower than the standard requirement that chargers do not exceed a maximum 95°C, showing the charger is safe to use.
• The ripple current is much lower than the maximum standard of 200mV.

To achieve high performance and power density, the Philips charger uses GaN Systems’ 650V E-mode GaN power transistor (GS-065-011-1-L). This high performance, low-cost FET is in a small 5×6 mm PDFN package and offers low junction-to-case thermal resistance, which results in ultra-high switching frequency and efficiency output. With the GaN Systems EZDrive™ implementation combined with the ON Semiconductor NCP1342 controller, the charger power design is simplified, a “double-drive” is avoided, and low cost is achieved.

Refer to the teardown analysis for more information about the Philips 65W GaN charger. Learn more about GaN Systems’ 65W QR Charger Reference Design.