In High-Efficiency And High-Reliability Applications
Wide-bandgap devices, such as silicon-carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) and gallium-nitride high electron mobility transistors (HEMTs), exhibit an excellent figure of merits compared to conventional silicon devices. This paper focuses on 650V/30~60A enhancement-mode GaN HEMTs provided by GaN Systems, analytically models its switching behaviors, summarizes the impact of parasitics and dead time, and applies it in two DC/DC converters. Systematic design rules are generated not only for soft switching but also for hard switching applications.
by Lucas (Juncheng) Lu, Guanliang Liu, and Kevin (Hua) Bai published in the CES Transactions on Electrical Machines and Systems, VOL. 1, NO. 3, September 2017