GaN Systems’ Di Chen explains how to test 650 V GaN transistors for your application. Our eval board is easily configured into any half-bridge-based topology, including synchronous boost and buck conversion modes, as well as pulsed switching to evaluate transistor waveforms.
That GaN transistors outperform silicon-based solutions has never been more convincingly demonstrated than by CE+T’s Red Electrical Devils, who won first place in Google’s Little Box Challenge. At APEC 2016, Girvan Patterson, President of GaN Systems, describes to Design World / EEWorld’s Lee Teschler CE+T’s winning design of an uber-compact inverter using GaN transistors. The…
G-Philos 700W GaN-based ESS is 30% smaller, 25% less power consumption than silicon version GaN Systems President Girvan Patterson describes a 1 kV energy storage system (ESS) from Korean-based customer G-Philos that stores solar-generated power and returns unconsumed power to the grid. The GaN-based design uses both 650 V and 100 V transistors, is up…
The island structure is the core GaN Systems IP. It has the dual advantage of an up to four times reduction in the size and cost of gallium nitride devices, while transferring substantial current from the on-chip metal to a separate carrier. GaN Systems makes it easy for designers and systems engineers to adopt gallium…
Gallium nitride transistors increase efficiency, lower power consumption and reduce system size and weight. GaN Systems is the first place system designers go to realize those benefits.
