Agreement aligns expansion efforts in gallium nitride adoption for power-conversion applications May, 2016 – Geneva, Ill.: Richardson RFPD, Inc. today announced an agreement with GaN Systems Inc. Under the terms of the agreement, Richardson RFPD will sell GaN Systems’ GaN on Si power devices on a global basis, excluding Israel. GaN Systems manufactures a range…
GaN Systems teams with the UK EPSRC Power Electronics Centre to accelerate the use of high speed GaN transistors in future power conversion or control applications Nottingham, England – At a ceremony held at the EPSRC Centre for Power Electronics Annual Conference 2016 in Nottingham, England, a post-graduate team from Imperial College London received the…
By re-designing IGBT and MOSFET solutions with GaN-based FETs, DRS optimized vehicle inverter performance, increased switching frequency by a factor of four, reduced size and weight, while achieving 98.5% efficiency. By Scott Ramsay, Technical Director, DRS – Consolidated Controls, Inc. At DRS, we set a goal to design an improved generation of our 2kVI vehicle…
At APEC 2016 it became abundantly clear to the industry that GaN transistors are here, they’re now, and they’re proliferating. GaN Systems, EPC, Transphorm, Panasonic, Infineon, Texas Instruments, and other manufacturers and developers all displayed GaN products in varying readiness, from existing only on PowerPoint slides to actual customer production units. It’s been fascinating to watch…
EDN describes how GaN is outperforming silicon in power management applications. This article describes how GaN transistors enabled CE+T’s Red Electrical Devils team to design the tour de force inverter that won Google’s Little Box Challenge. Their inverter produced a power density of 143 W/cubic inch in 14 cubic inches, outperforming the Little Box Challenge…
Charging levels are headed higher, and greater efficiency could make it easier to top up tomorrow’s bigger batteries without straining the grid. Researchers at the Advanced Power Electronics Lab at Kettering University, in partnership with auto electronics giant HELLA, now report that they have built a Level 2 onboard charger with an efficiency of 97%,…
Over the years, GaN power has been sarcastically described as “the technology of the future…and always will be.” While silicon carbide devices have been gaining a stronger beachhead in displacing IGBTs in higher voltage applications, the evolution of GaN as a cost-effective alternative to Si MOSFETs in applications from 200V up through 600V was, in…
GaN Systems’ Di Chen explains how to test 650 V GaN transistors for your application. Our eval board is easily configured into any half-bridge-based topology, including synchronous boost and buck conversion modes, as well as pulsed switching to evaluate transistor waveforms.
That GaN transistors outperform silicon-based solutions has never been more convincingly demonstrated than by CE+T’s Red Electrical Devils, who won first place in Google’s Little Box Challenge. At APEC 2016, Girvan Patterson, President of GaN Systems, describes to Design World / EEWorld’s Lee Teschler CE+T’s winning design of an uber-compact inverter using GaN transistors. The…
G-Philos 700W GaN-based ESS is 30% smaller, 25% less power consumption than silicon version GaN Systems President Girvan Patterson describes a 1 kV energy storage system (ESS) from Korean-based customer G-Philos that stores solar-generated power and returns unconsumed power to the grid. The GaN-based design uses both 650 V and 100 V transistors, is up…
