Global Semiconductor Alliance award honors GaN Systems for its industry impact. OTTAWA, Ontario, December 14, 2015 – GaN Systems, the leading manufacturer of gallium nitride power transistors, has won the coveted Global Semiconductor Alliance (GSA) 2015 “Start-Up to Watch” award. The award was announced and presented in front of an audience of over 1,400 executives…
A collaboration between Pi Innovo’s electronics design and development expertise and the superior performance of GaN Systems’ gallium nitride (GaN) semiconductors, offers automakers a pathway to the efficient and effective electrification of auxiliary systems for multi-voltage conventional, hybrid-electric, and pure electric vehicles. Multi award winning GaN Systems’ compound semiconductor devices are cost competitive with silicon…
OTTAWA, Ontario, December 1, 2015 – GaN Systems, the leading manufacturer of gallium nitride power transistors, announces that its foundry, Taiwan Semiconductor Manufacturing Corporation (TMSC), has expanded the high volume production of products based on GaN System’s proprietary Island Technology® by 10X in response to surging global demand from consumer and enterprise customers. GaN Systems…
Company expands sales and support to Israeli customers OTTAWA, Ontario, February 17, 2016 – GaN Systems, the leading manufacturer of gallium nitride power transistors, announces it has entered into an agreement with Eastronics, the largest distributor of high technology products in Israel. With this agreement, GaN Systems further extends its global product sales coverage and…
Unprecedented 2.6 kW/l, >97% efficient, ultra-compact, lighter EV charger made with GaN transistors OTTAWA, Ontario – Automotive electronics specialist HELLA, in collaboration with GaN Systems, the leading manufacturer of gallium nitride power transistors, and charging technology researchers at Kettering University’s Advanced Power Electronics Lab, have developed a Level-2 electric vehicle (EV) charger prototype with efficiencies…
Agreement aligns expansion efforts in gallium nitride adoption for power-conversion applications May, 2016 – Geneva, Ill.: Richardson RFPD, Inc. today announced an agreement with GaN Systems Inc. Under the terms of the agreement, Richardson RFPD will sell GaN Systems’ GaN on Si power devices on a global basis, excluding Israel. GaN Systems manufactures a range…
GaN Systems teams with the UK EPSRC Power Electronics Centre to accelerate the use of high speed GaN transistors in future power conversion or control applications Nottingham, England – At a ceremony held at the EPSRC Centre for Power Electronics Annual Conference 2016 in Nottingham, England, a post-graduate team from Imperial College London received the…
