GaN Systems Power & Energy Articles

Article: GaN Growth Seen Exploding on Efficiency Gains

Article: GaN Growth Seen Exploding on Efficiency Gains

This article was originally published at Power Electronics News on May 12, 2020. Read the rest of the piece here.  GaN (Gallium Nitride) is experiencing surging interests across multiple segments of the electronics industry and gaining widespread acceptance because of efficiency and productivity improvements manufacturers expect from its use. There’s a major shift happening in…

Article: The Year of the GaN Adapter and 5G’s Dirty Little Secret

Article: The Year of the GaN Adapter and 5G’s Dirty Little Secret

This article was originally published at eeDesignIt on May 6, 2020. Read the rest of the interview of GaN Systems’ CEO Jim Witham by Ruth Seely here.  GaN is changing the way we power things, and that’s becoming increasingly evident whether you look at consumer, automotive, 5G, or industrial power applications. Take 5G — It’s…

Article: The Year of the GaN Adapter and 5G’s Dirty Little Secret

Article: The Year of the GaN Adapter and 5G’s Dirty Little Secret

This article was originally published at eeDesignIt on May 6, 2020. Read the rest of the interview of GaN Systems’ CEO Jim Witham by Ruth Seely here.  GaN is changing the way we power things, and that’s becoming increasingly evident whether you look at consumer, automotive, 5G, or industrial power applications. Take 5G — It’s…

Article: Power Loss Characterization and Modeling for GaN-Based Hard-Switching Half-Bridges Considering Dynamic On-State Resistance

Article: Power Loss Characterization and Modeling for GaN-Based Hard-Switching Half-Bridges Considering Dynamic On-State Resistance

This article was published in full in IEEE Transactions on Transportation Electrification. Authors: R. Hou, Y. Shen, H. Zhao, H. Hu, J. Lu and T. Long Abstract: Gallium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) can achieve high frequency and high efficiency due to its excellent switching performance compared with conventional Si transistors. Nevertheless,…

Article: Power Loss Characterization and Modeling for GaN-Based Hard-Switching Half-Bridges Considering Dynamic On-State Resistance

Article: Power Loss Characterization and Modeling for GaN-Based Hard-Switching Half-Bridges Considering Dynamic On-State Resistance

This article was published in full in IEEE Transactions on Transportation Electrification. Authors: R. Hou, Y. Shen, H. Zhao, H. Hu, J. Lu and T. Long Abstract: Gallium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) can achieve high frequency and high efficiency due to its excellent switching performance compared with conventional Si transistors. Nevertheless,…

Article: Silicon is reaching its limit. What's next?

Article: Silicon is reaching its limit. What’s next?

This article by Marissa Lee on April 4 was published in full at BusinessTimes.com.  IF cities today are truly high-tech, why can’t we drive electric cars up to Kuala Lumpur on a single charge? Why are we tethered by a cable to a wall socket each time our smartphones run out of juice? Why is…

Article: Silicon is reaching its limit. What's next?

Article: Silicon is reaching its limit. What’s next?

This article by Marissa Lee on April 4 was published in full at BusinessTimes.com.  IF cities today are truly high-tech, why can’t we drive electric cars up to Kuala Lumpur on a single charge? Why are we tethered by a cable to a wall socket each time our smartphones run out of juice? Why is…

Article: Rethinking What's 'Smart' For The Next Generation Smart Home

Article: Rethinking What’s ‘Smart’ For The Next Generation Smart Home

This piece from April 2, 2020, by Jim Witham is published in full at Forbes.com.  Too often, the fact that a technology merely exists drives the direction of implementation, rather than focusing on developing technologies in response to real and important human needs. This has often been the case for the “smart home” in its…

Article: Rethinking What's 'Smart' For The Next Generation Smart Home

Article: Rethinking What’s ‘Smart’ For The Next Generation Smart Home

This piece from April 2, 2020, by Jim Witham is published in full at Forbes.com.  Too often, the fact that a technology merely exists drives the direction of implementation, rather than focusing on developing technologies in response to real and important human needs. This has often been the case for the “smart home” in its…

GaN Systems Launches Online Experience Showcase

GaN Systems Launches Online Experience Showcase

Invites Visitors to Virtually Explore How GaN is Leading the Power Electronics Revolution WHAT: OTTAWA, ONTARIO – April 6, 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today launched its Virtual Experience site displaying the latest technology innovations that are using GaN transistors as a cornerstone technology for smaller, lighter,…