The old way of creating power modules with gallium-nitride power devices was to just substitute GaN devices for silicon equivalents in the module chassis. The resulting modules just didn’t perform up to their potential. As explained by GaN Systems’ Jim Witham in this short video interview conducted by WHWT Media’s Lee Teschler, new module designs…
GaNpx packaging provides extreme speed and current with: 1) a near chipscale embedded package, 2) high current density & low profile, 3) optimal thermal performance, 4) extremely low inductance, and 5) no wirebonds. GaN Systems makes it easy for designers and systems engineers to adopt gallium nitride solutions.
The island structure is the core GaN Systems IP. It has the dual advantage of an up to four times reduction in the size and cost of gallium nitride devices, while transferring substantial current from the on-chip metal to a separate carrier. GaN Systems makes it easy for designers and systems engineers to adopt gallium…
