GaN Systems Data Center Articles

GaN Systems 9 transistors 2015-12-01

How Gallium Nitride Benefits Everyone

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GaN Systems – Island Technology®

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GaN Systems – GaNpx Packaging Process Flow

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Make it Possible with GaN Systems!

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Richardson RFPD Announces Agreement with GaN Systems

Agreement aligns expansion efforts in gallium nitride adoption for power-conversion applications May, 2016 – Geneva, Ill.: Richardson RFPD, Inc. today announced an agreement with GaN Systems Inc. Under the terms of the agreement, Richardson RFPD will sell GaN Systems’ GaN on Si power devices on a global basis, excluding Israel. GaN Systems manufactures a range…

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Imperial College London Wins GaN Systems Geoff Haynes Future Power Challenge

GaN Systems teams with the UK EPSRC Power Electronics Centre to accelerate the use of high speed GaN transistors in future power conversion or control applications Nottingham, England – At a ceremony held at the EPSRC Centre for Power Electronics Annual Conference 2016 in Nottingham, England, a post-graduate team from Imperial College London received the…

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Integration or Optimization…Which Comes First?

At APEC 2016 it became abundantly clear to the industry that GaN transistors are here, they’re now, and they’re proliferating. GaN Systems, EPC, Transphorm, Panasonic, Infineon, Texas Instruments, and other manufacturers and developers all displayed GaN products in varying readiness, from existing only on PowerPoint slides to actual customer production units. It’s been fascinating to watch…

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Google Little Box Challenge Showcases GaN Power Element

EDN describes how GaN is outperforming silicon in power management applications. This article describes how GaN transistors enabled CE+T’s Red Electrical Devils team to design the tour de force inverter that won Google’s Little Box Challenge. Their inverter produced a power density of 143 W/cubic inch in 14 cubic inches, outperforming the Little Box Challenge…

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Podium Session at PCIM Europe Marks New Chapter in GaN Power Device Adoption

Over the years, GaN power has been sarcastically described as “the technology of the future…and always will be.”  While silicon carbide devices have been gaining a stronger beachhead in displacing IGBTs in higher voltage applications, the evolution of GaN as a cost-effective alternative to Si MOSFETs in applications from 200V up through 600V was, in…