GaN Systems Consumer Articles

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New tools for driving GaN E-HEMT transistors

[UPDATE: This product has been selected an EDN Top 100 Product of 2016! The article originally appeared in EDN Tools & Learning as a Product Review.] The world already consumes too much energy. Globally, as the middle class grows, even more energy will be required. Government regulations and increasingly stringent emissions standards compound the need…

GaN Systems 9 transistors 2015-12-01

GaN Systems releases new Application Note highlighting paralleling GaN devices to reach 650V, 240A

GaN transistors exhibit exceptional paralleling capabilities. App Note GN004 is a practical guide to paralleling and layout considerations when designing in high speed GaN HEMT devices. The Note also provides a design example of a 4x paralleled GaN E-HEMT half bridge power stage. Download App Note GN004 Design considerations of paralleled GaN HEMT.

GaN Systems 9 transistors 2015-12-01

24th China Power Supply Society Advanced Technical Training Workshop Features GaN Systems’ Transistors

China Power Supply Society’s advanced workshop trains hundreds of power engineers to leverage the benefits of GaN transistors Shanghai, China – October 5, 2016 – Today, gallium nitride (GaN) transistors play an indispensable role in power systems by replacing power IGBTs and MOSFETs with devices that operate more efficiently, and reduce system size, weight and…

e2v logo

e2v and GaN Systems Global Alliance Extends the Power of GaN to Aerospace & Defense Industries

e2v is now the global provider of GaN Systems’ power transistors for Aerospace and Defense (A&D) applications   OTTAWA, Ontario and Milpitas, CA – September 27, 2016 – A master supply agreement between e2v, the global leader in the high reliability (hi-rel) semiconductor market, and GaN Systems, the leading manufacturer of gallium nitride power transistors,…

Heyday IC

Unique Driver Architecture Enhances GaN-Based Isolated Power-Supply Designs

by CEO Joe Duigan and CTO Dr. Karl Rinne, Heyday Integrated Circuits GaN-on-silicon E-HEMT transistors are the choice for maximum performance, efficiency and cost-effective power supplies. Cost-effective driver technology enhances supply performance by simplifying layout, reducing component count, and improving reliability. GaN (gallium nitride) E-HEMTs (High Electron Mobility Transistors) have altered the dynamics of power…

Webinar: The Benefits Of Gallium Nitride Power Switching Transistors

Download PDF Now > This webinar sponsored by RichardsonRFPD and hosted by IEEE GlobalSpec introduces GaN Systems’ products and capabilities, and compares them to other GaN devices and silicon MOSFET devices. Examples in key applications are reviewed. Overview GaN Systems introduced Enhancement Mode GaN Transistors to the world in 2014, unveiling both 100V and 650V devices. Since…

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How to Design Power Electronics: HF Power Semiconductor Modeling Webcast

This webinar sponsored by Keysight Technologies and given by Dr. Ingmar Kallfass provides a new workflow for projects that include modeling and characterization of components and devices such as GaN transistors, electro-thermal co-simulation, and integration of GaN into power electronic circuits. Register to watch the webinar.

Wow factor

The Wow! factor is alive and well

[Originally published in the Ottawa Business Journal] Kanata North’s pedigree, talent are driving semiconductor success Kanata North remains on the cutting edge when it comes to the next generation of semiconductor technologies. And why wouldn’t it be? That pedigree is rich and runs deep, all the way back to Bell Northern Research and the old…

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GaN Systems’ Founders Girvan Patterson and John Roberts Retire

OTTAWA, Ontario, August 26, 2016 – Ten years after launching a gallium nitride (GaN) semiconductor company, and leading the company to #1 in the world of GaN power transistors, the two Ottawa-based co-founders of GaN Systems, President Girvan Patterson and CTO John Roberts have announced their retirement. Having achieved their goal of building GaN Systems…