Entries by LaunchSnap

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Why GaN E-HEMTs are a Power Designer’s Transistor of Choice

Article originally posted on allaboutcircuits.com on April 09, 2019 by Gary Elinoff. Wireless charging was all over APEC 2019’s power conference as some of the biggest companies in the industry gear up to provide wireless power solutions. Meanwhile, tech juggernaut Apple pulls its wireless charging platform. What gives? Wireless charging is all about effortless convenience.…

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GaN Systems Debuts Suite of Low Cost, High Performance GaN Power Transistors

OTTAWA, Ontario, Canada, March 5, 2019  – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today announced the availability of the GS-065 low current (3.5A to 11A) transistor line. The product suite, developed for sub-1kW power applications, is targeted for consumer level power supply products such as AC adapters for gaming and workstation…

PCIM 2018 – Nuremberg Germany – June 5-7 2018

PCIM Europe (Power Conversion and Intelligent Motion) is the international leading exhibition for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. We will be at booth number 511 in Hall 9 (9-511). International exhibitors inform visitors in three exhibition halls about the newest products, trends and developments in the power electronics industry. PCIM Europe…

APEC 2018 – San Antonio TX – March 4-8 2018

APEC 2018 is the premier global event in applied power electronics. We will be in booth number 1041. Stop by! APEC focuses on the practical and applied aspects of the power electronics business. This is not just a designer’s conference; APEC has something of interest for anyone involved in power electronics:

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Critical Transient Processes Of Enhancement-Mode Gan HEMTs

In High-Efficiency And High-Reliability Applications Download Now > Wide-bandgap devices, such as silicon-carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) and gallium-nitride high electron mobility transistors (HEMTs), exhibit an excellent figure of merits compared to conventional silicon devices. This paper focuses on 650V/30~60A enhancement-mode GaN HEMTs provided by GaN Systems, analytically models its switching behaviors, summarizes the impact…

Using GaN Transistors in Power Modules

The old way of creating power modules with gallium-nitride power devices was to just substitute GaN devices for silicon equivalents in the module chassis. The resulting modules just didn’t perform up to their potential. As explained by GaN Systems’ Jim Witham in this short video interview conducted by WHWT Media’s Lee Teschler, new module designs…