Part NumberGS66508B
DownloadsDatasheet
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Evaluation BoardsGS665MB-EVB
(Mother board)

GS66508B-EVBDB
(Daughter board)

VDS650 V E-HEMT
IDS30 A
RDS(on)50 mΩ
QG5.8 nC
Dimensions (mm)7.1 x 8.5 x 0.5
CoolingBottom-Side
MR QTY250
TR QTY3000
MR Size16 mm x 7″
TR Size16 mm x 13″

GS66508B

650V Enhancement Mode GaN Transistor

The GS66508B is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS66508B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Easy gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 V / +10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 7.0 x 8.4 mm2 PCB footprint
  • Source Sense (SS) pin for optimized gate drive
  • RoHS 6 compliant

APPLICATIONS

  • High efficiency power conversion
  • High density power conversion
  • AC-DC Converters
  • Bridgeless Totem Pole PFC
  • ZVS Phase Shifted Full Bridge
  • Half Bridge topologies
  • Synchronous Buck or Boost
  • Uninterruptable Power Supplies
  • Industrial Motor Drives
  • Single and 3Φ inverter legs
  • Solar and Wind Power
  • Fast Battery Charging
  • Class D Audio amplifiers
  • DC-DC converters
  • On Board Battery Chargers
  • Traction Drive

EVALUATION BOARD: GS665MB-EVB

650 V Universal Motherboard

This universal motherboard can be used with daughter cards (sold separately) to evaluate the entire GaN Systems 650 V family of GaN E-HEMT products.

COMPATIBLE WITH:

  • GS66508B-EVBDB1
  • GS66508T-EVBDB2
  • GS66516T-EVBDB2

EVALUATION BOARD: GS66508B-EVBDB1

650 V GaN E-HEMT Daughter Board

This product requires a motherboard (GS665MB-EVB)

The GS66508B-EVBDB1 daughter board consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (part number GS66508B) and all necessary circuits including half bridge gate drivers, isolated power supplies and optional heatsink to form a functional half bridge power stage. It allows users to easily evaluate the GaN E-HEMT performance in any half bridge-based topology, either with the universal motherboard or the users’ own system design.

  • Serves as a reference design and evaluation tool as well as deployment-ready solution for easy insystem evaluation
  • Vertical mount style with height of 35mm, which fits in majority of 1U design and allows evaluation of GaN
  • E-HEMT in traditional through-hole type power supply board
  • Current shunt position for switching characterization testing
  • Universal form factor and footprint for all products

Created in partnership with Analog Devices, featuring the ADuM4121, a high voltage, isolated gate driver.

EVALUATION BOARD: GSWP300W-EVBPA

300W, 6.78 MHz Class EF2 Power Amplifier For Wireless Power Transfer

The GSWP300W-EVBPA evaluation board is designed to support and expedite the innovation of wireless power transfer systems. The evaluation board uses our GS66508B E-HEMTs in a 300W 6.78MHz class EF2 power amplifier.  With select component changes, the evaluation board can operate up to a power level of 1000W.

Target applications include the wireless charging and powering of drones, robots, power tools, ebikes, AGV and more.

  • Multiple configurations – constant current mode or constant voltage mode
  • Push-pull with EMI filter
  • Single ended mode with/without EMI filter
  • 650V / 30A, 50mΩ GaN E-HEMTs
  • High speed GaN driver
  • Over temperature protection

EVALUATION BOARD: GS1200BTP-EVB

1.2 kW High Efficiency Bridgeless Totem Pole PFC Evaluation Kit

This evaluation kit demonstrates the performance benefits and design considerations of a high efficiency, high power density 1.2kW Bridgeless Totem Pole PFC (BTP PFC) controlled by advanced digital control methods coupled with GaN Systems’ E-HEMTs.

Technical highlights

  • Continuous Conduction Mode (CCM) BTP PFC
  • Universal AC input (85 V- 264 V)
  • 1.2 kW continuous output power @ 240V
  • 600 W continuous output power @ 85V
  • 385 VDC regulated output voltage with firmware adjustability
  • Adaptive deadtime control
  • Hysteretic current control with cycle by cycle current limiting, fast transient response and inductor current measurement
  • > 99% peak efficiency
  • > 0.99 power factor
  • Low THD (< 3%)

Features

  • Fanless operation
  • Self-powered. External DC supplies are not required
  • Bi-directional power flow, suitable for ESS and OBC systems
  • Low part count and BOM cost due to highly integrated SA4041 controller
  • Easily scaled to 10kW with magnetic and GaN device selection

Created in partnership with Solantro Semiconductor Corp, featuring the SA4041 Digital Power processor

EVALUATION BOARD: GSP665x-EVBIMS2

High Power IMS2 Evaluation Platform

This horizontal Insulated Metal Substrate (IMS) evaluation platform can be used to evaluate the electrical and thermal performance benefits of GaNPX® bottom-side cooled E-HEMTs in high power applications.

The optimized thermal and electrical designs provide a excellent reference for implementing a low cost, high performance design.

Features and Benefits

  • Enhanced thermal and mechanical design
  • Ultra low inductance, bottom-cooled GaNPX® package
  • Minimizing parasitic elements of the power and gate drive loops via magnetic flux-cancellation
  • High performance switching with low EMI
  • Scalable and parallelable GaNPX® packaging for applications up to 100 kW
  • Low cost thermal solution for high power applications.

The platform consists of a gate drive motherboard and separate Half Bridge IMS evaluation boards (3kW and 6kW). The motherboard layout is configured to drive 1 or 2 half bridge circuits or 1 full bridge circuit.

IMS2 platform gate drive motherboard
GSP665HPMB-EVBIMS2

IMS2 half bridge evaluation boards
GSP66508BHB-EVBIMS2
GSP66516BHB-EVBIMS2

EVALUATION BOARD: GS-EVB-HB-66508B-ON1

650 V GaN E-HEMT Daughter Board

Utilize with any ON Semiconductor controller IC eval board

The GS-EVB-HB-66508B-ON1 evaluation board consists of NCP51820 gate drive solution with two GS66508B GaN E-HEMT’s in a fully-functional Half-Bridge. It allows users to easily evaluate GaN in an ultra- small layout with NCP51280 gate driver, for a highly cost-effective solution.

Applications and Benefits:

  • AC-DC Adapters for Mobile, OLED TV, Gaming
  • Datacenter power supplies, PV Inverters/ESS
  • Bridgeless Totem Pole PFC, LLC, ACF, ZVS
  • Highly-integrated Half-Bridge Driver in QFN 4×4 creates ultra-small GaN gate drive layouts
  • 1MHz operation and 200 V/ns CMTI allows high power density GaN-based system designs

Created in partnership with ON Semiconductor, featuring NCP51820, a high voltage Half-Bridge gate driver

25mm x 25mm Layout