Part NumberGS-010-120-1-T
DownloadsContact Us for More Details >
VDS100 V E-HEMT
IDS120 A
RDS(on)5 mΩ
QG25 nC
Dimensions (mm)7.0 x 4.0 x 0.54
CoolingTop-Side
MR QTY250
TR QTY3000
MR Size16 mm x 7″
TR Size16 mm x 13″

GS-010-120-1-T

100V Enhancement Mode GaN Transistor

The GS-010-120-1-T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS-010-120-1-T is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Easy gate drive requirements
  • Transient tolerant gate drive (-20V to +7V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 7.0 x 4.0 mm2 PCB footprint
  • Dual gate pads for optimal board layout
  • RoHS 6 compliant

APPLICATIONS

  • 48V Automotive
  • High efficiency power conversion
  • High density power conversion
  • Energy Storage Systems
  • AC-DC Converters (secondary side)
  • ZVS Phase Shifted Full Bridge
  • Half Bridge topologies
  • Synchronous Buck or Boost
  • Uninterruptable Power Supplies
  • Industrial Motor Drives
  • Fast Battery Charging
  • Class D Audio amplifiers
  • Traction Drive

Contact Us to Learn More About This Product