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GS-EVB-HB-66508B-RN
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GS-EVB-HB-66508B-RN
Part NumberGS-EVB-HB-66508B-RN
DownloadsTechnical Manual
RAA226110 Datasheet

Only Available As Paper Design

DISCONTINUED

REFERENCE DESIGN: GS-EVB-HB-66508B-RN

650 V 30A GaN Half-Bridge and Driver with Over Current Protection

GS-EVB-HB-66508B-RN is a 650 V 30A GaN Half-Bridge and RAA226110 gate drive reference design. This reference design consists of two GaN Systems 650V GaN E-mode transistors “GS66508B” and all necessary circuits including half bridge gate drivers, isolated power supplies and optional heatsink to form a functional half bridge power stage. This reference design can help users build a platform to evaluate the GaN E-modes performance in any half bridge-based topology, either with the universal mother board (P/N: GS665MB-EVB) or users’ own system design.

Features and Benefits

  • Programmable Over Current Protection
  • Integrated VGS regulation, 2 MHz fSW range
  • Adjustable Turn-On Slew Rate for EMC (300 mA ~ 2 A)
  • Supports Bi-Polar or Uni-Polar GaN gate drive
  • 0 V turn off voltage
  • Vertical mount style with height of 35 mm
  • Current shunt position for switching characterization testing

Applications

  • Enterprise: 1U Power Supplies up to 5 kW
  • Cost-effective high-power density BTP PFC
  • Industrial: PV Inverters / ESS and Motor Drives
  • EV: DC-DC Converter and Onboard Charger

Created in partnership with Renesas, Featuring RAA226110, the low-Side GAN FET Driver with Programmable Source Current and Adjustable Overcurrent Protection

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