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Part Number | GS-EVB-HB-66508B-RN |
---|---|
Downloads | Technical Manual RAA226110 Datasheet |
Only Available As Paper Design
DISCONTINUED
REFERENCE DESIGN: GS-EVB-HB-66508B-RN
650 V 30A GaN Half-Bridge and Driver with Over Current Protection
GS-EVB-HB-66508B-RN is a 650 V 30A GaN Half-Bridge and RAA226110 gate drive reference design. This reference design consists of two GaN Systems 650V GaN E-mode transistors “GS66508B” and all necessary circuits including half bridge gate drivers, isolated power supplies and optional heatsink to form a functional half bridge power stage. This reference design can help users build a platform to evaluate the GaN E-modes performance in any half bridge-based topology, either with the universal mother board (P/N: GS665MB-EVB) or users’ own system design.
Features and Benefits
- Programmable Over Current Protection
- Integrated VGS regulation, 2 MHz fSW range
- Adjustable Turn-On Slew Rate for EMC (300 mA ~ 2 A)
- Supports Bi-Polar or Uni-Polar GaN gate drive
- 0 V turn off voltage
- Vertical mount style with height of 35 mm
- Current shunt position for switching characterization testing
Applications
- Enterprise: 1U Power Supplies up to 5 kW
- Cost-effective high-power density BTP PFC
- Industrial: PV Inverters / ESS and Motor Drives
- EV: DC-DC Converter and Onboard Charger