产品号GS-065-080-1-D
产品号Contact Us for More Details >
VDS650 V E-HEMT
IDS80 A
RDS(on)18 mΩ
QG16 nC
尺寸(MM)6.6 x 5.6

GS-065-080-1-D

650V增强型氮化镓晶体管

The GS-065-080-1-D is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Easy gate drive requirements
  • Transient tolerant gate drive (-20 / +10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 6.6 x 5.6 mm PCB footprint
  • RoHS 6 compliant
  • Dual gate drive for optimized layout & paralleling

应用

  • High efficiency power conversion
  • High density power conversion
  • AC-DC Converters
  • On Board Battery Chargers
  • Traction Drive
  • Bridgeless Totem Pole PFC
  • ZVS Phase Shifted Full Bridge
  • Half Bridge topologies
  • Synchronous Buck or Boost
  • Uninterruptable Power Supplies
  • Industrial Motor Drives
  • Single and 3Φ inverter legs
  • Solar Power
  • Fast Battery Charging
  • DC-DC converter
  • Energy Storage Systems