Part NumberGS66506T
DownloadsDatasheet
LTSpice
PSpice
Step File
Allegro Library
Altium Library
VDS650 V E-HEMT
IDS22.5 A
RDS(on)67 mΩ
QG4.4 nC
Dimensions (mm)5.6 x 4.5 x 0.54
CoolingTop-Side
MR QTY250
TR QTY3000
MR Size16 mm x 7″
TR Size16 mm x 13″

GS66506T

650V Enhancement Mode GaN Transistor

The GS66506T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS66506T is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology™ die
  • Low inductance GaNPX® package
  • Easy gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 / +10 V )
  • Very high switching frequency (> 100 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 5.6 x 4.5 mm2 PCB footprint
  • Dual gate pads for optimal board layout
  • RoHS 6 compliant

APPLICATIONS

  • High efficiency power conversion
  • High density power conversion
  • AC-DC Converters
  • Bridgeless Totem Pole PFC
  • ZVS Phase Shifted Full Bridge
  • Half Bridge topologies
  • Synchronous Buck or Boost
  • Uninterruptable Power Supplies
  • Industrial Motor Drives
  • Single and 3Φ inverter legs
  • Solar and Wind Power
  • Fast Battery Charging
  • Class D Audio amplifiers
  • DC-DC converters
  • On Board Battery Chargers
  • Traction Drive