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How GaN Enhancement-mode HEMT devices improve the preformance of Power Systems

This video was produced by Aspencore and posted to Electronics Know-how.

Power system companies continue adopting gallium nitride (GaN) transistors in place of silicon IGBTs and MOSFETs. By designing GaN into power systems and modules, customers have launched a stream of smaller, lighter and less costly electronic systems into the market. These products exhibit dramatic performance improvements that typically include 80% reductions in size and 5X increases in power density. At electronica GaN presented an array of new power systems designed by GaN Systems’ customers that incorporate GaN Enhancement-mode HEMT (E-HEMT) devices, and that target automotive, energy storage, wireless charging, consumer and industrial applications.

GS66508T-EVBHB high current half bridge evaluation board from GaN Systems on Vimeo.