Papers, Articles and Presentations

Learn from our experts how to use and take advantage of GaN transistors in your systems.

Document DetailsDate
Parasitic Capacitance Eqoss Loss Mechanism Calculations and Measurement in Hard Switching with GaN HEMTs  – Available with IEEE membership2018 Oct
A Full Power Emulation Platform for Evaluating Power Semiconductors – Available with IEEE membership2018 Oct
Opportunities and Challenges of Gan HEMTs in ZVS Applications – Available with IEEE membership
2018 Oct
A Mathematical Guideline for Designing an AC-DC LLC Converter with PFC – Available with IEEE membership
2018 Oct
High-Power-Density 400VDC-19VDC LLC Solution with GaN HEMTs2018 Oct
Loss Distribution among Paralleled GaN HEMTs2018 Oct
High power Constant Current Class EF2 GaN Power Amplifier for AirFuel Magnetic Resonance Wire-less Power Transfer Systems2018 Oct
System Level Considerations with GaN Power Switching2018 Mar
Opportunities and Design Considerations of GaN HEMTs in ZVS Applications2018 Mar
A Full Power Emulation Platform for Evaluating Power Semiconductors2018 Mar
Parasitic Capacitance Eqoss Loss Mechanism, Calculation, and Measurement in Hard-Switching for GaN HEMTs2018 Mar
High Efficiency, High Power PA Design for Wireless Power Transfer
2018 Mar
An Experimental Comparison of GaN E-HEMTs versus SiC MOSFETs over Different Operating Temperatures2017 Nov
A Modular Designed Three-phase High-efficiency High-power-density EV Battery Charger Using Dual/Triple-Phase-Shift Control – Available with IEEE membership2017 Nov
Utilizing GaN transistors in 48V communications DC-DC converter design2017 Nov
New tools for driving GaN E-HEMT transistors2017 Oct
A high power-density and high efficiency insulated metal substrate based GaN HEMT power module – Available with IEEE membership2017 Oct
Critical transient processes of enhancement-mode GaN HEMTs in high-efficiency and high-reliability applications2017 Oct
A Novel energy balanced variable frequency control for input-series-output-parallel modular EV fast charging stations – Available with IEEE membership2017 Sep
Applying Variable-Switching-Frequency Variable-Phase-Shift Control and E-Mode GaN HEMTs to an Indirect Matrix Converter-Based EV Battery Charger – Available with IEEE membership2017 Jul
The Benefits of Gallium Nitride Power Transistors Span Multiple Markets2017 Jun
A Performance Comparison of GaN E-HEMTs versus SiC MOSFETs2017 Jun
System Level Advantages of Designing with GaN2017 May
Paralleled GaN Transistors Boost Converter Power Up to 100 kW2017 May
Paralleling GaN E-HEMTs in 10kW–100kW systems – Available with IEEE membership
2017 Mar
A model-based buck-type active filter using proportional-resonant controller and GaN HEMTs – Available with IEEE membership2017 Mar
A Novel Power Inverter Design Using GaN Transistors Produces a Power Density of 61.2 W/in32016 Sep
SiC and GaN vs. IGBTs: The Imminent Tug of War for Supremacy
2016 Jul
Paralleling GaN E-HEMTs in 10kW-100kW Systems – Available with IEEE membership2016 Jul
Integration or Optimization…Which Comes First?2016 Jun
Level 2 Onboard Charger with GaN Semiconductors Achieves Record Efficiency2016 Mar
Design consideration of gate driver circuits and PCB parasitic parameters of paralleled E-mode GaN HEMTs in zero-voltage-switching applications – Available with IEEE membership
2016 Mar
Google Little Box Challenge Showcases GaN Power Element2016 Mar
An E-mode GaN HEMTs based three-level bidirectional DC/DC converter used in Robert Bosch DC-grid system – Available with IEEE membership
2016 Nov
Comparison of Silicon and GaN Transistors Leads to an Optimized Inverter Design
2016 May